Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance-Reference-Cited by-同舟云学术

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Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

Published:1999-08 Issue:8 Volume:43 Page:1527-1533
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Xu D,Suemitsu T,Yokoyama H,Umeda Y,Yamane Y,Enoki T,Ishii Y

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Ultra-high speed modulation-doped field-effect transistors: a tutorial review

2. 0.05-µm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

3. Lester LF, Smith PM, Ho P, Chao PC, Tibirio P, Duh KG, Wolf ED. IEDM Tech Dig, 1988. p. 172

4. Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs

5. Breakdown analysis of an asymmetrical double recessed power MESFET's

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1. Fabrication of double recess structure by single lithography step using silicon-nitride-assisted process in pseudomorphic HEMTs;Microelectronic Engineering;2014-09

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