Conditions of ion implantation into thin amorphous Si gate layers for suppressing threshold voltage shift

Author:

Suzuki Kunihiro,Sudo Ritsuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Diffusion of boron in silicon through oxide layer;Horiuch;Jpn J Appl Phys,1990

2. Sun JY, Wong C, Taur Y, Hsu CH. Study of boron penetration through thin oxide with p+ polysilicon gate. Symp on VLSI Technol Tech Dig 1989;17–8

3. Sung JM, Lu CY, Chen ML, Hillenius SJ. Fluorine effect on boron diffusion of p+ gate devices. IEDM Tech Dig 1989;447–50

4. A physical model for boron penetration through thin gate oxide from p+ polysilicon gate;Pfiester;IEEE Eelectron Dev Lett,1990

5. Diffusion of As, P, and B from doped polysilicon through thin SiO2 films into Si substrates;Matsuura;J Electrochem Soc,1991

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-Tilt-Angle Boron Implantation Into Polycrystalline Si Gates;IEEE Transactions on Electron Devices;2004-01

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