A semi-empirical model for the AlGaAs/GaAs HBT long-term current instability-Reference-Cited by-同舟云学术

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A semi-empirical model for the AlGaAs/GaAs HBT long-term current instability

Published:2000-03 Issue:3 Volume:44 Page:541-548
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhou W.,Liou J.J.,Huang C.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors;Liou,1996

2. A practical end-of-life model for semiconductor devices;Ash;IEEE Trans. Reliability,1989

3. Reliability analysis of GaAs/AlGaAs HBT’s under forward current/temperature stress;Hafizi,1990

4. Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base;Sugahara,1993

5. Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors;Henderson,1994

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