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Resonant-tunneling mixed-signal circuit technology

Published:1999-08 Issue:8 Volume:43 Page:1355-1365
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Seabaugh A,Brar B,Broekaert T,Morris F,van der Wagt P,Frazier G

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. 3rd Int Wkshop Quantum Functional Devices Assoc Future Electron Dev Japan;Yamamoto,1997

2. High-speed and low-power operation of a resonant tunneling logic gate MOBILE

3. IEEE Cornell Conference on Adv Conc High Speed Semicond DevCirc;Brar,1997

4. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

5. RTD/HFET low standby power SRAM gain cell

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1. Influence on Characteristics of RTD Due to Variation of Different Parameters and Material Properties;International Journal of High Speed Electronics and Systems;2017-12

2. High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105A/cm2 grown by metal-organic vapor-phase epitaxy;Journal of Crystal Growth;2011-12

3. RTDs Based Cellular Neural/Nonlinear Networks with Applications in Image Processing;Advanced Materials Research;2011-11

4. Logic circuit design using monostable–bistable transition logic element based on standard BiCMOS process;Microelectronics Journal;2011-02

5. Design and fabrication of multiple-valued multiplexer using negative differential resistance circuits and standard SiGe process;Solid-State Electronics;2008-06

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