1.55 μm Er-doped GaN LED-Reference-Cited by-同舟云学术

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1.55 μm Er-doped GaN LED

Published:1999-07 Issue:7 Volume:43 Page:1231-1234
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Shen H,Pamulapati J,Taysing M,Wood M.C,Lareau R.T,Ervin M.H,Mackenzie J.D,Abernathy C.R,Pearton S.J,Ren F,Zavada J.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Low-noise erbium-doped fibre amplifier operating at 1.54μm

2. High-gain erbium-doped traveling-wave fiber amplifier

3. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN

4. Er doping of III-nitrides during growth by metalorganic molecular beam epitaxy

5. Erbium implanted thin film photonic materials

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly induced photosensing behavior of Erbium (Er), Yttrium (Y) and Terbium (Tb) doped nanostructured Cadmium Sulphide (CdS) thin films prepared by nebulizer spray pyrolysis method;Journal of Alloys and Compounds;2022-11

2. Tunable room temperature ferromagnetism and optical bandgap of CdS:Er nanoparticles;Applied Physics A;2021-04-20

3. Vibrational Spectroscopy of Na–H Complexes in ZnO;Journal of Electronic Materials;2013-08-29

4. Spin-Hamiltonian parameters and defect structures for the trigonal Yb3+centers in wurtzite-type ZnS and CdS crystals;Physica Scripta;2011-10-31

5. Enhancement of photoluminescence due to erbium-doped in CdS thin films;Journal of Materials Science;2011-08-10

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