Analysis of 0.5 μm channel Al/WSix/Poly-Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation

Author:

Kataoka M,Komuro K,Fujita K,Taniguchi A

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Extremely high efficient UHF power MOSFET for handy transmitter;Itoh;IEDM,1983

2. Highly efficient 1.5 GHz Si Power MOSFET for digital cellular front end;Yoshida,1992

3. A 2.45-GHz power LD-MOSFET with reduced source inductance by V-grooved connection;Ishikawa;IEDM,1985

4. A high-power high-gain VD-MOSFET operating at 900 MHz;Ishikawa;IEEE Trans Electron Devices,1987

5. Power DMOS for high-frequency and switching Applications;Fong;IEEE Trans Electron Devices,1980

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