Author:
Han Zhiyi,Goldsman Neil,Stettler Mark A.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Numerical simulation of non-homogeneous submicron semiconductor devices by a deterministic particle method;Mustieles;Solid-State Electron,1993
2. Wang XL, Jallepalli S, Yeap CF, Maziar CM. Two dimensional characteristic method for Boltzmann transport equation and its application to deep submicron MOSFET's. In: SRC TECHCON'93. 1993. p. 352–4
3. Hess K. Monte Carlo device simulation: full band and beyond. Boston: Kluwer Academic Publishers, 1991
4. Evolution of non-equilibrium electron distribution functions at hydrodynamic scales in multi-valley semiconductors;Cheng;J Phys,1995
5. Das A, Lundstrom M. Scattering matrix simulation of electron transport in model bipolar devices. IEEE Trans Electron Devices 1992;39:1157
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献