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Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs

  • Published:1998-06 Issue:6 Volume:42 Page:1021-1025
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Lee J.W.,MacKenzie K.D.,Johnson D.,Shul R.J.,Pearton S.J.,Abernathy C.R.,Ren F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-01

2. Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes;Journal of Luminescence;2007-12

3. Efficacy of ECR-CVD silicon nitride passivation in InGaP∕GaAs HBTs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

4. Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl[sub 3] plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

5. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs;Solid-State Electronics;2002-09
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