Author:
Yuan H.X,Grubisic D,Wong T.T.S
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. MOVPE grown Ga0.6In0.4Sb photodiodes for 2.55 μm detection
2. Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE
3. Yuan, H. X., Grubisic, D. and Wong, T. T. S., to be published
4. Ternary III–V Technology. Final report of DARPA contract MDA972-91-C-0046, Johnson Matthey Electronics, 1997
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献