Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-Like FET (DMT)
2. Design and characteristics of InGaAs/InP composite-channel HFET's
3. Performance of interface engineered SiNx/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's
4. Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructures
5. Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
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