The breakdown voltage of unguarded and field plate guarded silicon detector diodes-Reference-Cited by-同舟云学术

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The breakdown voltage of unguarded and field plate guarded silicon detector diodes

Published:2001-01 Issue:1 Volume:45 Page:183-191
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Beck G.A.,Carter A.A.,Carter J.R.,Greenwood N.M.,Lucas A.D.,Munday D.J.,Pritchard T.W.,Robinson D.,Wilburn C.D.,Wyllie K.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Instability of the behaviour of high resistivity silicon detectors due to the presence of oxide charges;Longoni;Nucl Instr Meth,1990

2. Guard ring design for high voltage operation of silicon detectors;Evensen;Nucl Instr Meth,1993

3. Breakdown protection and long term stabilisation for Si detectors;Bischoff;Nucl Instr Meth,1993

4. The effect of metal field plates on multiguard structures with floating p+ guard rings;Avset;Nucl Instr Meth,1996

5. Radiation-tolerant breakdown protection of silicon detectors using multiple floating guard rings;Beck;Nucl Instr Meth,1997

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1. Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies;Journal of Instrumentation;2024-07-01

2. Silicon strip and pixel detectors for particle physics experiments;Physics Reports;2019-10

3. Study on geometry of silicon PIN radiation detector for breakdown voltage improvement;International Journal of Nanotechnology;2015

4. A Research on Thick PIN Detector with High Breakdown Voltage;ECS Transactions;2010-11-23

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