Electron tunneling through thin oxide–nitride–oxide films under electric field concentration-Reference-Cited by-同舟云学术

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Electron tunneling through thin oxide–nitride–oxide films under electric field concentration

Published:1998-03 Issue:3 Volume:42 Page:441-446
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Matsuo Naoto,Fujiwara Hiroaki,Miyoshi Tadaki

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Sakao, M., Kasai, N., Ishijima, T., Ikawa, E., Watanabe, H., Terada, K. and Kikkawa, T. IEDM Tech. Dig., 1990, p. 655

2. Yoshimaru, M., Miyano, J., Inoue, N., Sakamoto, A., You, S., Tamura, H. and Ino, M., IEDM Tech. Dig., 1990, p. 659

3. Fazan, P. C. and Ditali, A., IEDM Tech. Dig., 1990, p. 663

4. New model for a capacitance increase of a capacitor with hemispherical grains

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