Ionized-Impurity Scattering of Majority Electrons in Silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. An improved ionized‐impurity scattering model for Monte Carlo simulations
2. Calculated majority‐ and minority‐carrier mobilities in heavily doped silicon and comparisons with experiment
3. Theory of screening and electron mobility: Application ton-type silicon
4. Effect of the electron-plasmon interaction on the electron mobility in silicon
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