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GaN based heterostructure for high power devices

Published:1997-10 Issue:10 Volume:41 Page:1555-1559
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Asif Khan M.,Chen Q.,Shur Michael S.,Dermott B.T.,Higgins J.A.,Burm J.,Schaff W.J.,Eastman L.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Monte Carlo calculation of the velocity‐field relationship for gallium nitride

2. Monte Carlo simulation of electron transport in gallium nitride

3. High Electron Mobility in Two-Dimensional Electrons Gas in AlGaN/GaN Heterostructures and in Bulk GaN;Shur;J. Electronic Materials,1996

4. Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition

5. Proc. 5th Conf. Silicon Carbide and Related Compounds;Joshi,1994

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