Composition and charge properties of Al/Ti–SiO2–InP (100) structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition;Journal of Electronic Materials;2002-12
2. Photoluminescence of layered SiO2-InP structures;Journal of Optical Technology;2001-10-01
3. Investigation of Low-Temperature Deposition of Silicon Dioxide on Indium Phosphide by Liquid Phase Deposition;Japanese Journal of Applied Physics;1999-10-15
4. SiO/sub 2/ film formation and electrical properties of InP MIS structures;ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)
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