Analysis of variance-reduction schemes for ensemble Monte Carlo simulation of semiconductor devices-Reference-Cited by-同舟云学术

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Analysis of variance-reduction schemes for ensemble Monte Carlo simulation of semiconductor devices

Published:1997-04 Issue:4 Volume:41 Page:599-605
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pacelli A,Ravaioli U

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Monte Carlo calculations on hot electron energy tails

2. Impact ionization of electrons in silicon (steady state)

3. MOS/sup 2/: an efficient MOnte Carlo Simulator for MOS devices

4. PMC-3D: a parallel three-dimensional Monte Carlo semiconductor device simulator

5. Simulation of a long term memory device with a full bandstructure Monte Carlo approach

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1. Kinetic Monte Carlo simulations of plasma-chemistry;Plasma Sources Science and Technology;2020-11-01

2. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations;Solid-State Electronics;2019-09

3. Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs;Solid-State Electronics;2018-05

4. Semi-analytic Modeling for Hot Carriers in Electron Devices;Hot Carrier Degradation in Semiconductor Devices;2014-10-04

5. Basic Semiconductor and Metal-Oxide-Semiconductor (MOS) Physics;Technology Computer Aided Design;2013-05-03

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