Noncontacting photothermal radiometry of SiO2/Si MOS capacitor structures

Author:

Salnick A,Jean C,Mandelis A

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photothermoelastic interaction in a two-dimensional semiconductor with nonlocal stress theory;International Journal for Computational Methods in Engineering Science and Mechanics;2024-04-22

2. Influence of the Doping Level of Silicon on its Optical and Recombination Parameters Measured with the Nondestructive Photothermal Radiometry Method;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

3. Possibilities of the Investigations of the Thermal Parameters of the Polybutyl Methacrylate Siloxane Coatings with the Use of the Photothermal Radiometry;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

4. Photo-thermoelastic inter action in a semiconductor with cylindrical cavity due to memory-effect;Mechanics of Time-Dependent Materials;2023-09-13

5. In-Zn-Sn-O thin film based transistor with high-k HfO2 dielectric;Thin Solid Films;2022-07

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