Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Tunnelling spectroscopy,1982
2. Inelastic electron tunneling spectroscopy: Capabilities and limitations in metal–oxide–semiconductor devices
3. Inelastic-Electron-Tunneling Spectroscopy of Metal-Insulator-Metal Junctions
4. Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system
5. Interface states and impurities in MOS structures with very thin tunneling barriers
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