High-performance AlInAs/GaInAs δ-doped HEMT with negative differential resistance switch for logic application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. A high-speed eight-channel optoelectronic integrated receiver array comprising GaInAs p-i-n PD's and AlInAs/GaInAs HEMTs
2. W-band InP HEMT MMICs using finite-ground coplanar waveguide (FGCPW) design
3. Improving the characteristics of an inverted HEMT by inserting an InAs layer into the InGaAs channel
4. Design and fabrication of double modulation doped InAlAs/lnGaAs/InAs heterojunction FETs for high-speed and millimeter-wave applications
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