High reflectivity distributed Bragg reflectors for 1.55 μm VCSELs using InP/airgap
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Design and analysis of double-fused 1.55-μm vertical cavity lases;Babic;IEEE J. Quant. Electron.,1997
2. Lon-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP–GaAs/AlAs DBR’s by wafer fusion;Ohiso;IEEE J. Quant. Electron.,1998
3. Continuous waves operation of 1.26 μm GaInAsN/GaAs vertical-cavity surface-emitting lasers grown by metaloganic chemical vapor deposition;Sato;Electron. Lett.,2000
4. Data transmission up to 10 Gbit/s with 1.3 μm wavelength InGaAsN VCSELs;Steinle;Electron. Lett.,2001
5. Room temperature low threshold CW operation of 1.23 μm GaAsSb VCSELs on GaAs substrates;Yamada;Electron. Lett.,2000
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