Electrical characteristics of a-SiGe:H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact-Reference-Cited by-同舟云学术

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Electrical characteristics of a-SiGe:H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact

Published:2003-10 Issue:10 Volume:47 Page:1787-1791
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lin Cha-Shin,Yeh Rong-Hwei,Li Inn-Xin,Hong Jyh-Wong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Thin-film transistors on a-Si:H;Thomson;IEEE Trans. Electron Dev.,1982

2. High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD material;Chen;IEEE Electron Dev. Lett.,1996

3. Amorphous-silicon thin-film transistors with very high field-effect mobility;Lin;IEEE Electron Dev. Lett.,1991

4. Sub-40 nm Pt–Si Schottky source/drain metal-oxide-semiconductor field-effect transistors;Wang;Appl. Phys. Lett.,1999

5. Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts;Nishika;Jpn. J. Appl. Phys.,1998

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs;Journal of Computational Electronics;2016-10-04

2. Planarized ambipolar a-SiGe:H thin-film transistors: Influence of the sequence of fabrication process;Solid-State Electronics;2014-09

3. Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology;MRS Proceedings;2012

4. Reversible crystallization of a-Si1−xGex alloys under the combined effect of light and temperature;Journal of Applied Physics;2004-07

5. Reversible Ordering of a-Si1-xGex by the Combined Effect of Light and Temperature;MRS Proceedings;2004

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