Oxide via etching in a magnetically enhanced CHF3/CF4/Ar plasma
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Reactive ion etch modeling using neural networks and simulated annealing
2. High rate and highly selective SiO2 etching employing inductively coupled plasma and discussion on reaction kinetics
3. Substrate bias effects in high‐aspect‐ratio SiO2 contact etching using an inductively coupled plasma reactor
4. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
5. Modeling oxide etching in a magnetically enhanced reactive ion plasma using neural networks
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1. Etching Characteristics of Low-k Dielectric Using C5H2F10 Liquefied Gas Plasma for Mitigating of Global Warming Potential;Science of Advanced Materials;2021-09-01
2. On the relationships between plasma chemistry, etching kinetics and etching residues in CF4+C4F8+Ar and CF4+CH2F2+Ar plasmas with various CF4/C4F8 and CF4/CH2F2 mixing ratios;Vacuum;2018-02
3. Inductively Coupling Plasma (ICP) Treatment of Propylene (PP) Surface and Adhesion Improvement;Plasma Science and Technology;2009-12
4. Oxide via hole formation using magnetically enhanced reactive ion etching;Surface Engineering;2005-10
5. Partial diagnostic data to plasma etch modeling using neural network;Microelectronic Engineering;2004-11
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