Non-destructive deep trap diagnostics of epitaxial structures

Author:

Gorev Nikolai B.,Kodzhespirova Inna,Privalov Evgeny N.,Khvedelidze Levan,Khuchua Nina,Peradze Giorgi G.,Shur Michael S.,Stevens Kevin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Semi-insulating GaAs substrates. GaAs FET principles and technology;Windquist,1984

2. The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs IC’s;Makram-Ebeid;IEEE Trans. Electron. Dev.,1982

3. The backgating effect in GaAs IC active elements;Khvedelidze;Zarubezhnaya Elektronnaya Tekhnika,1987

4. Backgating effects in GaAs FETs with a channel semi-insulating substrate boundary;Sengouga;Solid-State Electron.,1995

5. The effect of backgating on the design and performance of GaAs digital integrated circuits;Birrittela;IEEE Trans. Electron. Dev.,1982

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