Chemical modification of subcritical water for the dissolution of Si3N4 layer in the fabrication of microelectronic devices-Reference-Cited by-同舟云学术

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Chemical modification of subcritical water for the dissolution of Si3N4 layer in the fabrication of microelectronic devices

Published:2022-10 Issue: Volume:189 Page:105699
ISSN:0896-8446
Container-title:The Journal of Supercritical Fluids
language:en
Short-container-title:The Journal of Supercritical Fluids

Author:

Son Changjin,Lee Yuseok,Lim Sangwoo

Funder

Korea Semiconductor Research Consortium

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,General Chemical Engineering

Reference35 articles.

1. Three-dimensional 128 Gb MLC vertical NAND flash memory with 24-WL stacked layers and 50 MB/s high-speed programming;Park;IEEE J. Solid-State Circuits,2014

2. Bit cost scalable technology with punch and plug process for ultra high density flash memory;Tanaka;Dig. Tech. Pap. - Symp. VLSI Technol.,2007

3. Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide;Iwase;Jpn. J. Appl. Phys.,2018

4. NAND Flash Memory Technologies;Aritome,2015

5. Etching of silicon nitride in 3D NAND structures;Bassett;ECS Trans.,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Behavior of oxide regrowth during the selective Si3N4 etching process on 3D NAND structures using finite element computational simulations;Journal of Industrial and Engineering Chemistry;2024-02

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