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High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

  • Published:2014-01 Issue: Volume:41 Page:34-40
  • ISSN:0925-9635
  • Container-title:Diamond and Related Materials
  • language:en
  • Short-container-title:Diamond and Related Materials

Author:

Tallaire A.,Achard J.,Boussadi A.,Brinza O.,Gicquel A.,Kupriyanov I.N.,Palyanov Y.N.,Sakr G.,Barjon J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. CVD Diamond for Electronic Devices and Sensors,2008

2. Thick boron doped diamond single crystals for high power electronics;Achard;Diam. Relat. Mater.,2011

3. Optical Engineering of Diamond;Koizumi,2013

4. Electrical properties of lateral p–n junction diodes fabricated by selective growth of n+ diamond;Hoshino;Phys. Status Solidi A,2012

5. Energy level of compensator states in (001) phosphorus-doped diamond;Kato;Diam. Relat. Mater.,2011

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