Interface regulation of diamond-doped GaInSn composites-Reference-Cited by-同舟云学术

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Interface regulation of diamond-doped GaInSn composites

Published:2024-01 Issue: Volume:141 Page:110655
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Du Shijie,Guo Hong,Yang Hui,Zhang Jie,Xie Zhongnan,Wu Nan

Funder

Natural Science Foundation of Beijing Municipality

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference54 articles.

1. Chip-level thermal management in GaN HEMT: critical review on recent patents and inventions;Abdullah;Microelectron. Eng.,2023

2. Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: a review;Nautiyal;Microelectron. Reliab.,2022

3. The dawn of Ga2O3 HEMTs for high power electronics - a review;Singh;Mater. Sci. Semicond. Process.,2020

4. Design of a differential power oscillator for 433 MHz WPT using e-GaN HEMTs;Rezk;Ain Shams Eng. J.,2022

5. Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration;Hsu;Micromachine,2021

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Orientation-dependent tribological behavior of the graphite–diamond composite;Tribology International;2024-11

2. Microstructure and Property Evolution of Diamond/GaInSn Composites under Thermal Load and High Humidity;Materials;2024-03-01

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