Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers-Reference-Cited by-同舟云学术

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Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers

Published:2011-03 Issue:3 Volume:20 Page:285-289
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Muret P.,Volpe P.-N.,Tran-Thi T.-N.,Pernot J.,Hoarau C.,Omnès F.,Teraji T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. High-voltage Schottky diode on epitaxial diamond layer

2. High temperature, high voltage operation of diamond Schottky diode

3. Diamond diodes and transistors

4. A 3.4 eV potential barrier height in Schottky diodes on boron-doped diamond thin films

5. Modelling of single-crystal diamond Schottky diodes for high-voltage applications

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1. A Review of Diamond Materials and Applications in Power Semiconductor Devices;Materials;2024-07-11

2. Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics;Nanomaterials;2024-03-01

3. Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate;Diamond and Related Materials;2021-04

4. Fabrication of Dual-Barrier Planar Structure Diamond Schottky Diodes by Rapid Thermal Annealing;IEEE Transactions on Electron Devices;2021-03

5. Diamond power devices: state of the art, modelling, figures of merit and future perspective;Journal of Physics D: Applied Physics;2019-12-17

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