Author:
Matsushita Akio,Fujimori Naoji,Tsuchida Yuki,Ohtani Noboru,Dojima Daichi,Koide Kazunori,Kaneko Tadaaki,Shikata Shinichi
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Recentdevelopments accelating SiC adoption;Bhalla;Mat. Sci. For.,2018
2. Impact of embedding Schottky barrier diodes into 3.3 kV and 6.5 kV SiC MOSFET;Kawahara;Mat. Sci. For.,2018
3. 4H SIC trench MOSFET with ultra-low on resistance by using minitualization technology;Ichimura;Mat. Sci. For.,2018
4. New unipolar switching power device figures of merit;Huang;IEEE Electron Device Letters,2004
5. Single crystal diamond wafer for high power electronics;Shikata;Diam. Relat. Mater.,2016
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