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Homoepitaxial diamond p–n+ junction with low specific on-resistance and ideal built-in potential

  • Published:2008-04 Issue:4-5 Volume:17 Page:782-785
  • ISSN:0925-9635
  • Container-title:Diamond and Related Materials
  • language:en
  • Short-container-title:Diamond and Related Materials

Author:

Makino Toshiharu,Kato Hiromitsu,Ri Sung-Gi,Yamasaki Satoshi,Okushi Hideyo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heavy phosphorus doping of diamond by hot-filament chemical vapor deposition;Diamond and Related Materials;2023-04

2. Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation;Materials Research Letters;2022-06-06

3. Device formation and the characterizations;Power Electronics Device Applications of Diamond Semiconductors;2018

4. Ion Beam Induced Charge analysis of diamond diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-08

5. Diamond Schottky-pn diode using lightly nitrogen-doped layer;Diamond and Related Materials;2017-05
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