Propagation and annihilation of threading dislocations during off-axis growth of heteroepitaxial diamond films-Reference-Cited by-同舟云学术

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Propagation and annihilation of threading dislocations during off-axis growth of heteroepitaxial diamond films

Published:2016-05 Issue: Volume:65 Page:53-58
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Klein Oliver,Mayr Michael,Fischer Martin,Gsell Stefan,Schreck Matthias

Funder

GSI (Helmholtzzentrum für Schwerionenforschung, Darmstadt)

FRM2 (Forschungsneutronenquelle Heinz Maier-Leibnitz, München)

ILL (Institut Max von Laue — Paul Langevin, Grenoble)

BMBF

BMWi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. A 2-in. mosaic wafer made of a single-crystal diamond;Yamada;Appl. Phys. Lett.,2014

2. Transmission electron microscopy study of the very early stages of diamond growth on iridium;Brescia;Diam. Relat. Mater.,2008

3. Diamond nucleation on iridium buffer layers and subsequent textured growth: a route for the realization of single-crystal diamond films;Schreck;Appl. Phys. Lett.,2001

4. Efficiency of dislocation density reduction during heteroepitaxial growth of diamond for detector applications;Stehl;Appl. Phys. Lett.,2013

5. Growth sector dependence and mechanism of stress formation in epitaxial diamond growth;Fischer;Appl. Phys. Lett.,2012

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heteroepitaxy of diamond semiconductor on iridium: a review;Functional Diamond;2022-12-31

2. Chemical vapor deposited diamond with versatile grades: from gemstone to quantum electronics;Frontiers of Materials Science;2022-03

3. The inclination of threading dislocation in chemical vapor deposition-grown single-crystal diamond analyzed by synchrotron white beam X-ray topography;Journal of the Korean Physical Society;2022-01

4. Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures;Diamond and Related Materials;2022-01

5. Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth;New Carbon Materials;2021-12

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