Fabrication of a submicron source-drain gap for p–i–p field effect transistors using epitaxial diamond layers-Reference-Cited by-同舟云学术

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Fabrication of a submicron source-drain gap for p–i–p field effect transistors using epitaxial diamond layers

Published:2004-11 Issue:11-12 Volume:13 Page:1939-1943
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Kawakami N.,Yokota Y.,Tachibana T.,Hayashi K.,Inoue K.,Kobashi K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Diamond Materials;Nishimura,1993

2. p-Type semiconducting structures in diamond implanted with boron ions

3. Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistors

4. Radiation response of p-i-p diodes on diamond substrates of various type: electrical properties of semiconductor-insulator homojunctions

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Small signal analysis of MPCVD diamond Schottky diodes;Diamond and Related Materials;2019-03

2. Progress of High Frequency and High Output Power FET;Journal of Inorganic Materials;2010-08-30

3. Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator;Applied Physics Letters;2006-03-13

4. Atomic layer deposition of Al2O3 thin films on diamond;Diamond and Related Materials;2005-11

5. Device operation of p-i-p type diamond metal–insulator–semiconductor field effect transistors with sub-micrometer channel;Diamond and Related Materials;2005-03

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