Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing-Reference-Cited by-同舟云学术

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Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Published:2021-11 Issue: Volume:119 Page:108595
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Fan Yexin,Xu Zongwei,Song Ying,Sun Tianze

Funder

Ministry of Education of the People's Republic of China

State Administration of Foreign Experts Affairs

Chinesisch-Deutsche Zentrum für Wissenschaftsförderung

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference64 articles.

1. Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing;Castelletto;Opt. Lett.,2018

2. Room temperature quantum emission from cubic silicon carbide nanoparticles;Castelletto;ACS Nano,2014

3. Obtaining atomically smooth 4H–SiC (0001) surface by controlling balance between anodizing and polishing in electrochemical mechanical polishing;Yang;Nanomanufacturing Metrol.,2019

4. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide;Riedel;Phys. Rev. Lett.,2012

5. Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H-SiC;Udvarhelyi;Phys. Rev. Appl.,2020

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1. Nanostructure evolution and surface modification mechanism of Cr ion-implanted single-crystal iron: insights from molecular dynamics simulations;Journal of Materials Science;2024-05-31

2. Molecular insights into vacancy defect formation in silicon anodes induced by femtosecond laser;Materials Today Communications;2024-03

3. Molecular dynamics simulation of the formation of W-centers in silicon by Ga ion irradiation;Physical Review B;2024-02-22

4. Collision Cascade in a Silicon-Based Device under Energetic Ar Ions Irradiation;Coatings;2023-10-25

5. Xenon ion implantation induced defects and amorphization in 4H–SiC: Insights from MD simulation and Raman spectroscopy characterization;Ceramics International;2023-08

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