Author:
Liu L.Y.,Shen T.L.,Liu A.,Zhang T.,Bai S.,Xu S.R.,Jin P.,Hao Y.,Ouyang X.P.
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Cited by
15 articles.
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1. Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09
2. Neutron irradiation and polarization effect of 4H–SiC Schottky detector;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-07
3. Study on interface modification and tribological properties of MCMB-SiC self-lubricating composites;Tribology International;2024-04
4. Development of the large sensitive area 4H-SiC Schottky detectors at the Back-n;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-11
5. A study of the signal rising edge produced by a charge sensitive preamplifier connected to a 4H-SiC detector;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-05