{111}-oriented diamond films and p/n junctions grown on B-doped type Ib substrates-Reference-Cited by-同舟云学术

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{111}-oriented diamond films and p/n junctions grown on B-doped type Ib substrates

Published:2005-03 Issue:3-7 Volume:14 Page:522-525
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Tavares C.,Tajani A.,Baron C.,Jomard F.,Koizumi S.,Gheeraert E.,Bustarret E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Ultraviolet Emission from a Diamond pn Junction

2. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

3. Phosphorus-doped chemical vapor deposition of diamond

4. Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon‐13 studies

5. Growth‐sector dependence of fine structure in the first‐order Raman diamond line from large isolated chemical‐vapor‐deposited diamond crystals

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A cathodoluminescence study of boron doped {111}-homoepitaxial diamond films;Diamond and Related Materials;2010-04

2. Theoretical models for doping diamond for semiconductor applications;physica status solidi (b);2008-09

3. Theoretical Models for Doping Diamond for Semiconductor Applications;Physics and Applications of CVD Diamond;2008-08-20

4. Cathodoluminescence as a tool to determine the phosphorus concentration in diamond;physica status solidi (a);2007-08-30

5. Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy;Journal of Applied Physics;2007-06

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