Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis-Reference-Cited by-同舟云学术

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Robustness of 4H-SiC 1200V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis

Published:2014-04 Issue: Volume:44 Page:62-70
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Denis P.,Dherbécourt P.,Latry O.,Genevois C.,Cuvilly F.,Brault M.,Kadi M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Performance evaluation of a Schottky SiC power diode in a boost PFC application;Spiazzi,2002

2. Report on 4H-SiC JTE Schottky diodes;Chen;Microelectron. Reliab.,2006

3. SiC-based power converters;Tolbert,2008

4. ESD in Silicon Integrated Circuits;Amerasekera,1995

5. 1200-V zero recovery rectifiers,2008

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1. A 4H-SiC MOSFET-Based ESD Protection With Improved Snapback Characteristics for High-Voltage Applications;IEEE Transactions on Power Electronics;2021-05

2. 4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications;IEEE Journal of the Electron Devices Society;2021

3. Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection;IEEE Electron Device Letters;2020-11

4. Investigation of ESD Protection in SiC BCD Process;2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2019-10

5. Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis;IEEE Transactions on Device and Materials Reliability;2018-06

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