Contribution of CN(X2Σ+) radicals to N atoms of hydrogenated amorphous carbon nitride films formed from the microwave discharge of the gas mixture of N2 and CH3CN-Reference-Cited by-同舟云学术

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Contribution of CN(X2Σ+) radicals to N atoms of hydrogenated amorphous carbon nitride films formed from the microwave discharge of the gas mixture of N2 and CH3CN

Published:2016-03 Issue: Volume:63 Page:125-131
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Ito Haruhiko,Mogi Nobuyoshi,Okada Kohtaro,Tsudome Hiroki

Funder

Nagaoka University of Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Deposition of Diamond-like Superhard Materials;Kulisch,1999

2. CRC Handbook of Chemistry and Physics;Fuhr,1998

3. Symmetry breaking in nitrogen-doped amorphous carbon: infrared observation of the Raman-active G and D bands;Kaufman;Phys. Rev. B,1989

4. Ion beam deposited carbon nitride films: characterization and identification of chemical sputtering;Hammer;Thin Solid Films,1996

5. Structure of carbon nitride films prepared by mass-separated low-energy ion beam deposition;Yamamoto;Diam. Relat. Mater.,2003

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