Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy-Reference-Cited by-同舟云学术

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Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy

Published:2006-04 Issue:4-8 Volume:15 Page:618-621
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Houzé F.,Alvarez J.,Kleider J.-P.,Bergonzo P.,Snidero E.,Tromson D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. The Properties of Diamond;Field,1979

2. Properties and Growth of Diamond;Davies,1994

3. Thin film diamond alpha detectors for dosimetry applications

4. Diamond ionisation chambers for dosimetry

5. Wide bandgap semiconductor materials for high temperature electronics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low voltage fabrication of sub-nanometer insulating layers on hydrogenated diamond;Journal of Applied Physics;2011-08

2. Comment on “Current routes in hydrogenated microcrystalline silicon”;Physical Review B;2010-06-04

3. Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond;Physical Review B;2010-01-08

4. Influence of morphology on the conductance of single-crystal diamond surfaces measured by atomic force microscopy;Journal of Applied Physics;2009-09

5. Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy;Diamond and Related Materials;2007-04

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