A theoretical study on dopants substituted on the H-terminated surface regulating the threshold concentration of nitrogen for accelerating diamond growth-Reference-Cited by-同舟云学术

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A theoretical study on dopants substituted on the H-terminated surface regulating the threshold concentration of nitrogen for accelerating diamond growth

Published:2024-08 Issue: Volume:147 Page:111317
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Zhao Weikang,Teng Yan,Tang Kun,Zhu Shunming,Yang Kai,Fan Kangkang,Zhao Gengyou,Gu Liangxue,Feng Bo,Zhang Rong,Zheng Youdou,Gu Shulin

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference52 articles.

1. Electronic structures of B 2 p and C 2 p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy [J];Nakamura;Phys. Rev. B,2004

2. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films [J];Gildenblat;Proc. IEEE,1991

3. Hole capture in boron-doped diamond [J];Glesener;Appl. Phys. Lett.,1994

4. An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth [J];Zhao;J. Phys. D. Appl. Phys.,2023

5. Mutual interaction of N, B, and O during heteroepitaxial diamond growth: triggering the nitrogen induced growth acceleration [J];Sartori;Phys. Status Solidi A,2014

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