Characterization of crystallinity of a large self-standing homoepitaxial diamond film-Reference-Cited by-同舟云学术

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Characterization of crystallinity of a large self-standing homoepitaxial diamond film

Published:2009-02 Issue:2-3 Volume:18 Page:216-219
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Tsubouchi Nobuteru,Mokuno Y.,Yamaguchi H.,Tatsumi N.,Chayahara A.,Shikata S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition

2. Homoepitaxial diamond layers on off-axis Ib HPHT substrates: Growth of thick films and characterisation by high-resolution X-ray diffraction

3. The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD

4. Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD

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1. Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector;Science China Materials;2024-06-11

2. A Large Gain and High Resolution Diamond Radiation Detector With Au/Hydrogen Termination Ohmic Contact;IEEE Electron Device Letters;2022-03

3. Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate;Diamond and Related Materials;2021-04

4. Conversions of a stacking fault to threading dislocations in homoepitaxial diamond growth studied by transmission electron microscopy;Applied Physics Letters;2020-11-30

5. Imaging crystal stress in diamond using ensembles of nitrogen-vacancy centers;Physical Review B;2019-11-11

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