Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. Carrier lifetimes in silicon
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3. D.K. Schroder, Semiconductor Material and Device Characterization Section 8.6.1, Wiley, New York, 1990.
4. Generation lifetime monitoring on high resistivity silicon using gated diodes
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