A model of charge collection for irradiated p+n detectors-Reference-Cited by-同舟云学术

A model of charge collection for irradiated p+n detectors

Published:2001-11 Issue:1-2 Volume:473 Page:128-135
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Martı́ i Garcı́a S.,Allport P.P.,Casse G.,Greenall A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. G. Casse et al., A comparative study of oxygenated and non-oxygenated Si pad diodes, miniature and large area microstrip detectors, Fourth International Symposium on Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, March 2000.

2. Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration

3. G. Kramberger et al., Determination of effective trapping times for electrons and holes in irradiated silicon. Third International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Firenze, Italy, June 2000, Nucl. Instr. and Meth. A (2002), in press.

4. Carrier lifetimes in heavily irradiated silicon diodes

5. Study of charge transport in non-irradiated and irradiated silicon detectors

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