Charge compensation in irradiated semiconductor devices using high-resistivity field plates-Reference-Cited by-同舟云学术

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Charge compensation in irradiated semiconductor devices using high-resistivity field plates

Published:2001-06 Issue:1 Volume:465 Page:101-107
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Parker Sherwood,Kenney Christopher

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

1. T. Rohe for the ATLAS pixel collaboration, Design and test of pixel sensors for the ATLAS pixel detector, Nucl. Instr. and Meth. A 460 (2001) 55.

2. J. Kemmer, Passivated semiconductor pn junction of high electric strength and process for the production thereof, April 17, 1984, US Patent 4442592.

3. The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides;Saks;IEEE Trans. Nucl. Sci.,1992

4. Charge and interface state generation in field oxides;Boesch;IEEE Trans. Nucl. Sci.,1984

5. Relationship between oxide density and charge trapping in SiO2 films;Mrstik;J. Appl. Phys.,1999

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3DX: a micromachined silicon crystallographic x-ray detector;X-Ray and Gamma-Ray Detectors and Applications IV;2003-01-16

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