Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities

Author:

Georgobiani A.N,Aminov U.A,Dravin V.A,Lepnev L.S,Mullabaev I.D,Ursaki V.V,Iljukhina Z.P

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Wide-band II-VI semiconductors and the prospects of their application

2. The Physics of II–VI Compounds;Georgobiani,1986

3. A.N. Georgobiani, M.B. Kotlyarevsky, V.N. Mikhalenko, Proc. P.N. Lebedev Phys. Inst., Luminescence of Crystals, Nauka, Moscow, vol. 138, 1983, p. 79 (in Russian).

4. Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation

5. Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy

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