Experimental studies of the noise properties of a deep submicron CMOS process-Reference-Cited by-同舟云学术

Experimental studies of the noise properties of a deep submicron CMOS process

Published:2001-04 Issue:1-3 Volume:461 Page:537-539
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Manghisoni M.,Re V.,Speziali V.,Svelto F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Noise contribution of the body resistance in partially-depleted SOI MOSFETs

2. Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion

3. High-frequency noise measurements on FET's with small dimensions

4. I. Bietti, R. Castello, M. Manghisoni, V. Re, V. Speziali, Effects of gate length reduction on the channel thermal noise of submicron P- and N-MOSFETs, in preparation.

5. Limitations in the accuracy of detector charge measurements set by the 1/⨍-noise in the front-end amplifier

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