Performance of epitaxial GaAs radiation detectors grown by vapour-based chemical reaction-Reference-Cited by-同舟云学术

Performance of epitaxial GaAs radiation detectors grown by vapour-based chemical reaction

Published:2003-10 Issue:1-2 Volume:512 Page:433-439
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Sellin P.J.,El-Abbassi H.,Rath S.,Bourgoin J.C.,Sun G.C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. P.J. Sellin, Recent advances in compound semiconductor radiation detectors, Nucl. Instr. and Meth. A, submitted for publication.

2. Performance of semi-insulating gallium arsenide X-ray pixel detectors with current-integrating readout

3. 320×240 GaAs pixel detectors with improved X-ray imaging quality

4. X-ray response of epitaxial GaAs

5. Hard X-ray test and evaluation of a prototype 32×32 pixel gallium–arsenide array

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