Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures-Reference-Cited by-同舟云学术

Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

Published:2000-03 Issue:1-3 Volume:442 Page:223-229
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Saveliev V,Golovin V

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference4 articles.

1. W.T. Tsang, Lightwave Communications Technology, AT&T Bell Laboratories, 1985.

2. A. Gasanov, V. Golovin, Z. Sadigov, N. Yusipov, Avalanche photodetector on base metal-resistor-semiconductor structure, Microelectronics, 1989.

3. S.M. Sze, Physics of Semiconductor Devices, A Wiley-Interscience publication, New York, 1981.

4. P.P. Webb, R.J. Mclntyre, J. Conrady, Properties of Avalanche Photodiodes RCA Rev. 35 (1974).

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