Reversible and irreversible effects on the electrical characteristics of new high-speed aSi and aSiC switches
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
1. Electrical and optical characteristics of an aSi:H/cSi heterojunction switch;Chen;Jpn. J. Appl. Phys.,1990
2. Switching characteristics of hydrogenated amorphous silicon/crystalline silicon heterojunction devices;Chen;Appl. Phys. Lett.,1990
3. Gate turn-off capability of insulated gate metal/amorphous Si/cSi(p-n) switching device;Fang;Appl. Phys. Lett.,1991
4. New aSiC, optically controlled, thyristor-like switch;Dimitriadis;Electron. Lett.,1992
5. New aSi/cSi and aSiC/cSi based optically controlled switching devices;Dimitriadis;Semicond. Sci. Technol.,1995
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2. Two dimensional simulation and modeling of the electrical characteristics of the a-SiC/c-Si(p) based, thyristor-like, switches;Microelectronic Engineering;2015-02
3. Characteristics of β-SiC/Si heterojunction with a SiGe buffer film;Microelectronics Journal;2008-08
4. Optical response of the Al/a-SiC/c-Si(p)/Au heterojunction structure;Microelectronics Journal;2002-09
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