A finite element simulator for three-dimensional analysis of interconnect structures

Author:

Sabelka R,Selberherr S

Publisher

Elsevier BV

Subject

General Engineering

Reference38 articles.

1. M. Bohr, Interconnect scaling — the real limiter to high performance ULSI, in: Int. Electron Devices Meeting, 1995, pp. 241–244.

2. M. Lerme, Multi layer metallization, in: H. Grünbacher (Ed.), 27th European Solid-State Device Research Conference, Editions Frontieres, Stuttgart, Germany, 1997.

3. Semiconductor Industry Association (SIA), The national technology roadmap for semiconductors, San Jose, CA, November 1997.

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5. Multilevel metal capacitance models for CAD design synthesis systems;Chern;IEEE Electron Device Lett.,1992

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5. Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET;Solid-State Electronics;2007-03

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