Electrical properties of Si−SiO2 structures treated in helium plasma-Reference-Cited by-同舟云学术

Electrical properties of Si−SiO2 structures treated in helium plasma

Published:1987-09 Issue:5 Volume:18 Page:5-12
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Kassabov J.,Atanassova E.,Dimittrov D.,Goranova E.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Review of RIE induced radiation damage in silicon dioxide;Ephrath;Solid State Technol.,1981

2. Carrier mobility in inversion layers and RF plasma induced radiation defects at the Si−SiO2 interface;Kassabov;Solid State Electronics,1984

3. Inversion channel transport properties of plasma-treated Si−SiO2 structures with different oxide thickness;Kassabov;Plasma News Report, April 1986,1986

4. Interface state generation in the Si−SiO2 system by nonionizing UV irradiation;Blumenstock,1986

5. The effect of low pressure plasma on Si−SiO2 structures and GaAs substrates;Chung;J. Vacuum Sci. Technol.,1983

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1. Fowler-Nordheim tunnelling injection in the Si-SiO2system treated with argon plasma;Semiconductor Science and Technology;1993-08-01

2. Influence of U.V. radiation and source-to-bulk bias on the processes in the SiSiO2 inversion channel;Solid-State Electronics;1992-11

3. Low temperature plasma nitridation of thin thermal SiO2 and a silicon surface with native oxide;Microelectronics Journal;1990-01

4. Plasma‐induced fixed oxide charge;Journal of Applied Physics;1989-08

5. Plasma processing effects on O2-HCl grown Si-SiO2 structures;Solid-State Electronics;1989-07