Dual damascene advanced interconnects: new copper seed layer enhancement process metrology using ion chromatography-Reference-Cited by-同舟云学术

Dual damascene advanced interconnects: new copper seed layer enhancement process metrology using ion chromatography

Published:2002-11 Issue:11 Volume:33 Page:945-953
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Lee Shih-Wei,Shi Frank G,Lopatin Sergey D

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

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3. T. Kinoshita, H. Koerner, M. Murakami, Y. Yasuda, N. Kobaysahi, Characterization of electrochemical deposition (ECD) Cu process comparison between PVD and CVD seed layer, Proceedings of Advanced Metallization Conference (AMC), 1999, pp. 129–134.

4. U. Cohen, Seed layers for interconnects and methods for fabricating such seed layers, US Patent 6,136,707, October 24, 2000 and other pending patent applications.

5. Semiconductor Fabtech;Chen,2000

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